AOD7N65/aoi7n65 650v,7a n-channel mosfet general description product summary 750v@150 i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 1.56 100% uis tested! 100% r g tested! symbol v ds the AOD7N65 & aoi7n65 have been fabricated using an advanced high voltage mosfet process that is design ed to deliver high levels of performance and robustnes s in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 650 g d s g s d g s d top view to252 dpak bottom view g g d d s s top view bottom view to251a ipak AOD7N65 aoi7n65 v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc maximum case-to-sink a maximum junction-to-case d,f c/w c/w 0.5 0.5 0.7 mj avalanche current c 144 repetitive avalanche energy c derate above 25 o c 178 1.4 a 3.1 single pulsed avalanche energy h 288 mj v/ns 5 p d v drain-source voltage 650 v 30 gate-source voltage t c =100c a i d t c =25c 7 4.3 23 pulsed drain current c continuous drain current b c junction and storage temperature range -50 to 150 c power dissipation b maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 rev.1.0: october 2014 www.aosmd.com page 1 of 6 downloaded from: http:///
AOD7N65/aoi7n65 symbol min typ max units 650 750 bv dss /?tj 0.67 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 1.2 1.56 g fs 7 s v sd 0.72 1 v i s maximum body-diode continuous current 7 a i sm 23 a c iss 780 982 1180 pf c oss 60 86 115 pf c rss 4 7 10 pf r g 1.5 3.2 5 q g 15 19.6 24 nc q gs 4.6 nc q gd 8.2 nc t d(on) 26 ns t r 43 ns t d(off) 53 ns static drain-source on-resistance v gs =10v, i d =3.5a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =325v, i d =7a, r g =25 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss a v breakdown voltage temperature coefficient i d =250a, v gs =0v v ds =0v, v gs =30v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c i dss zero gate voltage drain current v ds =650v, v gs =0v gate drain charge v ds =5v, i d =250 a v ds =520v, t j =125c i s =1a,v gs =0v v ds =40v, i d =3.5a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =520v, i d =7a gate source charge maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime t d(off) 53 ns t f 32 ns t rr 290 365 440 ns q rr 3.4 4.3 5.4 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =7a,di/dt=100a/ s,v ds =100v turn-off delaytime g turn-off fall time body diode reverse recovery charge i f =7a,di/dt=100a/ s,v ds =100v body diode reverse recovery time a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c in a to252 package, using junction-to-case therm al resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. l=60mh, i as =3.1a, v dd =150v, r g =10 ? , starting t j =25 c rev.1.0: october 2014 www.aosmd.com page 2 of 6 downloaded from: http:///
AOD7N65/aoi7n65 typical electrical and thermal characteristics 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 6v 10v 6.5v 5.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 3 6 9 12 15 r ds(on) ( ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =3.5a 40 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0 0.2 0.4 0.6 0.8 1 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev.1.0: october 2014 www.aosmd.com page 3 of 6 downloaded from: http:///
AOD7N65/aoi7n65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =520v i d =3.5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t c =25 c operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.7 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.1.0: october 2014 www.aosmd.com page 4 of 6 downloaded from: http:///
AOD7N65/aoi7n65 typical electrical and thermal characteristics 0 40 80 120 160 200 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0 2 4 6 8 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) t j(max) =150 c t a =25 c pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =55 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.1.0: october 2014 www.aosmd.com page 5 of 6 downloaded from: http:///
AOD7N65/aoi7n65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - vdc id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev.1.0: october 2014 www.aosmd.com page 6 of 6 downloaded from: http:///
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